The 1980s saw several companies try, and fail, to manufacture silicon circuit boards. There were a number of reasons these attempts failed. First there were serious reliability issues with silicon circuit boards that were larger than 1"x1". Delamination and cracking occurred in these boards under routine thermal cycling. In addition, there was inadequate interconnect density, allowing minimal functionality in the available area.
siXis has solved many of these issues with our core technology. To avoid delamination and cracking, siXis has developed technology that provides mechanical reinforcement between board layers, as well as stress relieving structures that allow the board to continue to function even under extreme thermal cycling. siXis’ high aspect ratio through-silicon-vias technology allows for significantly more functionality per unit area than competing technologies and reduces the number of board layers required.
How does siXis SiCB technology produce a superior embedded computing module?
- Miniaturization (smaller/lighter weight): siXis uses bare die and high-aspect-ratio (through silicon) vias to allow more functionality per unit volume. This allows us to integrate a variety of devices into a single package including FPGAs, memory, and power PCs — all in packaging that's up to 60% smaller.
- Lower Power Consumption/Greener: Less energy is required for signal propagation resulting in overall reduced power consumption.
- Higher performance: Higher I/O density (10X signal paths) means more performance per unit volume to enable cutting-edge electronics. Silicon-to-silicon connections and short interconnect paths have fewer parasitics, leading to higher performance.
- Reliability: siXis technology connects bare silicon die to a silicon substrate and eliminates failures from the matched coefficient of thermal expansion and fewer total connections.
